kw.\*:("REVETEMENT SEMICONDUCTEUR")
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HARMONIC ANALYSIS OF CURRENTS IN SEMICONDUCTING GLAZESWU CY; CHENG TC; WU CT et al.1982; IEEE TRANS. ELECTR. INSUL.; ISSN 0018-9367; USA; DA. 1982; VOL. 17; NO 1; PP. 81-83Article
MODE COUPLING BETWEEN DIELECTRIC AND SEMICONDUCTOR PLANAR WAVEGUIDESBATCHMAN TE; MCWRIGHT GM.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 628-634; BIBL. 29 REF.Article
MEASUREMENT AND ANALYSIS OF PERIODIC COUPLING IN SILICON-CLAD PLANAR WAVEGUIDESWRIGHT GMC; BATCHMAN TE; STANZIANO MS et al.1982; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 10; PP. 1753-1759; BIBL. 28 REF.Article
NEW DIELECTRIC WAVEGUIDE STRUCTURE FOR MILLIMETRE-WAVE OPTICAL CONTROLOGUSU K.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 7; PP. 253-254; BIBL. 5 REF.Article
STUDY ON CORONA SUPPRESSION FOR FUSION REACTOR COILSKADOTANI K; SATO T; KAKO Y et al.1980; I.E.E.E. TRANS. ELECTR. INSULAT.; ISSN 0018-9367; USA; DA. 1980; VOL. 15; NO 4; PP. 322-330; BIBL. 4 REF.Article
METHODE D'ACCROISSEMENT DE LA TENSION DISRUPTIVE LE LONG DE LA SURFACE D'UNE ISOLATION A L'AIDE D'UN REVETEMENT SEMICONDUCTEURLYSAKOVSKIJ GG; MONASTYRSKIJ AE; CHURAKOVA NA et al.1978; IZVEST. VYSSH. UCHEBN. ZAVED., ENERGET.; BYS; DA. 1978; VOL. 21; NO 10; PP. 121-125; BIBL. 2 REF.Article
HALBLEITENDE FLAECHENSTOFFE IM ELEKTROMASCHINEN-, TRANSFORMATOREN- UND KABELBAU. = REVETEMENTS SEMI-CONDUCTEURS UTILISES DANS LA CONSTRUCTION DES MACHINES ELECTRIQUES, DES TRANSFORMATEURS ET DES CABLESFUCHS R; HERZOG W.1978; ELEKTROTECH. Z., B; DTSCH.; DA. 1978; VOL. 30; NO 11; PP. 390-393Article
THIN-FILM OPTICAL WAVEGUIDE POLARIZER USING SEMICONDUCTING CADMIUM SULPHIDESASAKI K; HAMANO O; ABE H et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6694-6696; BIBL. 5 REF.Article
ETUDES DES PARAMETRES GOUVERNANT LA MIGRATION DE L'EAU ET DES IONS DANS LES GAINES ET LES ECRANS CHARGES DE NOIR DE CARBONE, UTILISES DANS LA FABRICATION DES CABLES D'ENERGIEDONNET JEAN BAPTISTE; SCHULTZ JACQUES; PAPIRER EUGENE et al.1979; ; FRA; DA. 1979; DGRST/78 7 2020; 25 P.; 30 CM; BIBL. 1 REF.; ACTION CONCERTEE: ELECTROTECHNIQUE GENERALEReport
FIRING CHARACTERISTICS OF A TRIGGERED VACUUM GAP EMPLOYING A DIELECTRIC COATED WITH A SEMICONDUCTING LAYER.GOVINDA RAJU GR; HACKAM R; BENSON FA et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 3; PP. 1101-1105; BIBL. 10 REF.Article
METHODS FOR ELECTRIC FIELD ANALYSIS OF INSULATION STRUCTURE WITH HIGH-RESISTANCE LAYER FOR SURFACE CORONA SUPPRESSION.ISOBE S; SAITO K.1976; ELECTR. ENGNG JAP.; U.S.A.; DA. 1976; VOL. 96; NO 3; PP. 1-9; BIBL. 5 REF.Article
ETUDE DES MECANISMES D'ADHESION DES POLYOLEFINES: APPLICATION AUX CABLES D'ENERGIEDELESCLUSE PHILIPPE.1980; ; FRA; DA. 1980; 119 P.; 30 CM; BIBL. 106 REF.; TH. DOCT.-ING./MULHOUSE-STRASBOURG 1/1980Thesis
THEORIE ET CALCUL D'UNE COUCHE SEMICONDUCTRICE NON LINEAIRE A GRADINS, PLACEE A LA SORTIE D'UNE BARRE DE L'ENCOCHE STATORIQUE D'UNE MACHINE ELECTRIQUEMAJER M; UL'RYKH B.1979; IZVEST. VYSSH. UCHEBN. ZAVED., ELEKTROMEKH.; SUN; DA. 1979; NO 5; PP. 386-393; BIBL. 9 REF.Article
CONTAMINATION FLASHOVER PERFORMANCE OF INSULATORS FOR UHVSCHNEIDER HM; NICHOLLS CW.1978; I.E.E.E. TRANS. POWER APPAR. SYST.; USA; DA. 1978; VOL. 97; NO 4; PP. 1411-1420; BIBL. DISSEM.Article
CORONA PROTECTION IN HIGH-VOLTAGE MACHINESHABERTHUER B.1982; INTERNATIONAL ELECTRICAL INSULATION CONFERENCE. 4/1982-05-10/BRIGHTON; GBR; LEATHERHEAD: CAVANAGH; DA. 1982; PP. 20-27Conference Paper
NEW TIE WIRE MAY PREVENT BURN DOWN.BEATY HW.1978; ELECTR. WORLD; U.S.A.; DA. 1978; VOL. 189; NO 7; PP. 50-52Article
EVALUATION OF A NEW MATERIAL FOR SEMICONDUCTING LAYER IN XLPE POWER CABLESNITTA Y; KAWASAKI Y.1981; IEEE TRANSACTIONS ON ELECTRICAL INSULATION; ISSN 0018-9367; USA; DA. 1981; VOL. 16; NO 2; PP. 140-143Article
PHOTO-INSPECTION BETWEEN CROSS-LINKED POLYETHYLENE AND A SEMICONDUCTING LAYERIWASAKI K; URATA H; YAHAGI K et al.1981; IEEE TRANSACTIONS ON ELECTRICAL INSULATION; ISSN 0018-9367; USA; DA. 1981; VOL. 16; NO 2; PP. 105-110; BIBL. 5 REF.Article
SPACE-CHARGE EFFECTS OF SEMICONDUCTIVE COATINGS ON TRIBOELECTRIC CHARGE EXCHANGEPOCHAN JM; GIBSON HW; BAILEY FC et al.1980; J. ELECTROSTATICS; NLD; DA. 1980; VOL. 8; NO 2-3; PP. 183-194; BIBL. 26 REF.Article
ETUDE DE L'ADHESION ENTRE LES COUCHES SEMI-CONDUCTRICES ET L'ISOLANT DES CABLES D'ENERGIEDELECLUZE PHILIPPE; SCHULTZ JACQUES; COTTEVIEILLE CHRISTIAN et al.1980; ; FRA; DA. 1980; DGRST/78 7 1031; 25 P.; 30 CM; BIBL. 12 REF.; ACTION CONCERTEE: MATERIAUX MACROMOLECULAIRESReport
DEVELOPMENT AND APPLICATION OF A NEW SEMICONDUCTIVE-GLAZE INSULATORCHERNEY EA; NIGOL O; REICHMAN J et al.1978; I.E.E.E. TRANS. POWER APPAR. SYST.; USA; DA. 1978; VOL. 97; NO 6; PP. 2117-2126; BIBL. 8 REF.Article
Electric field grading using thin film nonohmic zinc oxideTORREY, D. A; KIRTLEY, J. L. JR.IEEE transactions on power delivery. 1987, Vol 2, Num 4, pp 1164-1169, issn 0885-8977Conference Paper
Transparent and infrared-reflecting indium-tin-oxide films: quantitative modeling of the optical propertiesHAMBERG, I; GRANQVIST, C. G.Applied optics. 1985, Vol 24, Num 12, pp 1815-1819, issn 0003-6935Article
Polarization effects in silicon-clad optical waveguidesCARSON, R. F; BATCHMAN, T. E.Applied optics. 1984, Vol 23, Num 17, pp 2985-2987, issn 0003-6935Article
Etude du champ électrique d'un système d'électrodes à haute tension à revêtement semiconducteurVOZLINSKIJ, V. N; ERMOLENKO, G. V.Èlektričestvo. 1988, Num 3, pp 68-71, issn 0013-5380Article